Oday A. Hamadi; Salma M. Hussain
Abstract
In this work, normalized characteristics of laser-induced diffusion ofarsenic in silicon are presented. These characteristics are considered as areenhancing the As-doped silicon-based ...
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In this work, normalized characteristics of laser-induced diffusion ofarsenic in silicon are presented. These characteristics are considered as areenhancing the As-doped silicon-based devices. This enhancement is attributedto the increasing in the diffusion length within a certain layer of the activeregion in the device. Laser-induced diffusion is a perfect technique forimproving the characteristics of electronic devices because it is flexible,contactless, clean and well controlled.
